PART |
Description |
Maker |
CBRLDSH2-40 CBRLDSH2-40-15 |
SURFACE MOUNT HIGH DENSITY HIGH DENSITY SCHOTTKY BRIDGE RECTIFIER
|
Central Semiconductor C...
|
STP38N06 3645 |
N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR From old datasheet system N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR
|
STMICROELECTRONICS[STMicroelectronics]
|
STD20N06 |
N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR N-CHANNEL MOSFET
|
SamHop Microelectronics Corp. STMicroelectronics ST Microelectronics
|
PM4332 PM4332-PI |
HIGH DENSITY 32 CHANNEL T1/E1/J1 FRAMER
|
PMC-Sierra Inc
|
PM4332 |
HIGH DENSITY 32 CHANNEL T1/E1/J1 FRAMER
|
PMC[PMC-Sierra, Inc]
|
ISOPAC01 ISOPAC0103 ISOPAC0104 ISOPAC0111 ISOPAC01 |
High Current High density Isolated Silicon Power Rectifier(????靛?600V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存??? High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?纭?????娴??) High-Current Isolated Rectifier Assemblies. 150 V-1000 V. 10 nS - 2 microseconds 大电流隔离整流器大会150 V000五,10纳秒- 2微秒 HIGH CURRENT ISOLATED RECTIFIER ASSEMBLY High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存???
|
International Rectifier, Corp. Semtech Corporation
|
IDT82P2808 IDT82P2808BB IDT82P2808BBG |
8( 1) Channel High-Density T1/E1/J1 Line Interface Unit
|
Integrated Device Technology
|
MT4953 |
Dual P-Channel High Density Trench MOSFET
|
matrix microtech
|
1024-60LH_883 ISPLSI1024-60LH_883 1024 1024-60LH/8 |
60 MHz in-system prommable high density PLD In-System Programmable High Density PLD EE PLD, 25 ns, PQCC68 :4; Features:Alumunium Foil Polyester/Tinned Copper Braid; Impedance:120ohm RoHS Compliant: Yes
|
Lattice Semiconductor, Corp. Lattice Semiconductor Corporation LATTICE[Lattice Semiconductor] http://
|
ISPLSI2032VL-135LT44I ISPLSI2096VL ISPLSI2096VL-10 |
2.5VIn-SystemProgrammableSuperFASTHighDensityPLD 2.5V In-System Programmable SuperFAST⑩ High Density PLD 2.5V In-System Programmable SuperFAST High Density PLD 2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 8 ns, PQFP128 2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PQFP44
|
LATTICE[Lattice Semiconductor] LATTICE [Lattice Semiconductor] Lattice Semiconductor Corporation Lattice Semiconductor, Corp.
|
WNM2023-3TR WNM2023 |
N-Channel MOSFET Single N-Channel, 20V, 3.2A, Power MOSFET Supper high density cell design
|
TY Semiconductor Co., Ltd
|
WNM2024 WNM2024-3TR |
Single N-Channel, 20V, 3.9A, Power MOSFET Supper high density cell design N-Channel MOSFET
|
TY Semiconductor Co., L...
|